A new type of microscope developed by a Swiss team from the Paul Scherrer Institute (PSI) and the EPFL Lausanne combines the high penetration power of X-rays with high spatial resolution. This should, for the first time, allow the tiniest internal structures of semi-conductors and cells to be imaged. Using a PILATUS megapixel detector, it is possible to precisely count millions of individual X-ray photons. This makes it possible to record detailed refraction patterns from a sample whilst it is raster-scanned though the focal spot of the beam. Normal raster scans measure only the total absorption; another limitation is that they are only able to image surfaces, whereas the new technique provides an insight into internal structures. The many thousands of diffraction patterns are combined into a transmitting X-ray microscope...
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